Today, Samsung Electronics, announced that it has developed the world's first four gigabit (Gb) DDR3 DRAM chip, using 50 nanometer (nm) process technology.
With more and more data centers seeking a reduction in the number of servers they use, the development of low-power 4Gb DDR3 has become critical in reducing data center costs, improving server time management and increasing overall efficiency.
Using just 50 nanometer process technology, the 4Gb DDR3 DRAM chip runs at 1.6Gbps and is highly efficient consuming 40% less power, gulping only 1.35 volts to operate, in contrast to 1.5 volts consumed by the other DRAM chips. The 4Gb can be used in servers, desktop PCs, workstations and notebooks, given that it can be produced in chips in 16GB RDIMM, 8GB UDIMM and SODIMM modules.
DDR3 is 8 times faster than DDR2 memory and uses 30% less power. The new 50nm 4GB chip comes 5 months after Samsung introduced the first 2GB chips built using the 50nm process.
According to the International Data Corporation (IDC), a market research and analysis firm, the worldwide DDR3 DRAM market will account for 29 percent of the total DRAM market in 2009 and 75 percent in 2011. In addition, IDC estimates that 2Gb-or-higher DDR3 DRAM will make up three percent of the total DRAM market in 2009 and 33 percent in 2011 (units in bits).
If Samsung goes on to use its dual-die package technology, then its hoping for a breakthrough that will allow for 32GB DDR3 memory modules, giving a double boost to the chip capacity presently.
With more and more data centers seeking a reduction in the number of servers they use, the development of low-power 4Gb DDR3 has become critical in reducing data center costs, improving server time management and increasing overall efficiency.
Using just 50 nanometer process technology, the 4Gb DDR3 DRAM chip runs at 1.6Gbps and is highly efficient consuming 40% less power, gulping only 1.35 volts to operate, in contrast to 1.5 volts consumed by the other DRAM chips. The 4Gb can be used in servers, desktop PCs, workstations and notebooks, given that it can be produced in chips in 16GB RDIMM, 8GB UDIMM and SODIMM modules.
DDR3 is 8 times faster than DDR2 memory and uses 30% less power. The new 50nm 4GB chip comes 5 months after Samsung introduced the first 2GB chips built using the 50nm process.
According to the International Data Corporation (IDC), a market research and analysis firm, the worldwide DDR3 DRAM market will account for 29 percent of the total DRAM market in 2009 and 75 percent in 2011. In addition, IDC estimates that 2Gb-or-higher DDR3 DRAM will make up three percent of the total DRAM market in 2009 and 33 percent in 2011 (units in bits).
If Samsung goes on to use its dual-die package technology, then its hoping for a breakthrough that will allow for 32GB DDR3 memory modules, giving a double boost to the chip capacity presently.
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